AOK20N60L 600v,20a n-channel mosfet general description product summary v ds i d (at v gs =10v) 20a r ds(on) (at v gs =10v) < 0.37 w 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc mj 0.3 6.5 c/w AOK20N60L units a c mj w w/ o c c/w 0.5 c/w 40 300 maximum junction-to-ambient a,d c power dissipation b p d v/ns -55 to 150 v 30 gate-source voltage 20 12 t c =100c a 80 pulsed drain current c continuous drain current t c =25c i d the AOK20N60L is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drain-source voltage AOK20N60L 600 maximum junction-to-case 417 3.3 avalanche current c 630 single plused avalanche energy g 1260 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c repetitive avalanche energy c t c =25c thermal characteristics maximum case-to-sink a 5 g d s top view to-247 g d s AOK20N60L rev1.0: sepetember 2017 www.aosmd.com page 1 of 5
symbol min typ max units 600 700 bv dss / ?tj 0.8 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.2 3.8 4.5 v r ds(on) 0.29 0.37 w g fs 25 s v sd 0.69 1 v i s maximum body-diode continuous current 20 a i sm 80 a c iss 2448 3061 3680 pf c oss 190 273 360 pf c rss 13 22.8 35 pf r g 0.7 1.4 2.1 w q g 48 61 74 nc q gs 14 18 22 nc q gd 12 24 36 nc t d(on) 57 ns t r 125 ns t d(off) 128 ns t f 88 ns t rr 384 480 580 ns q rr 8 10.5 13 m c applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. v ds =5v, i d =250 m a v ds =480v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v body diode reverse recovery charge i f =20a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =300v, i d =20a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =480v, i d =20a body diode reverse recovery time dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =600v, v gs =0v m a bv dss static drain-source on-resistance v gs =10v, i d =10a reverse transfer capacitance i f =20a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =10a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =6.5a, v dd =150v, r g =25 ? , starting t j =25 c rev1.0: sepetember 2017 www.aosmd.com page 2 of 5
typical electrical and thermal characteristics 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 10 20 30 40 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temperature rev1.0: sepetember 2017 www.aosmd.com page 3 of 5
typical electrical and thermal characteristics 0 3 6 9 12 15 0 20 40 60 80 100 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =20a 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOK20N60L (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 5 10 15 20 25 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 9: current de-rating (note b) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOK20N60L (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1.0: sepetember 2017 www.aosmd.com page 4 of 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev1.0: sepetember 2017 www.aosmd.com page 5 of 5
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